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| ISL9K1560G3 November 2002 ISL9K1560G3 15A, 600V StealthTM Dual Diode General Description The ISL9K1560G3 is a StealthTM dual diode optimized for low loss performance in high frequency hard switched applications. The StealthTM family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the StealthTM diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. Formerly developmental type TA49410. Features * Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 1.2 * Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 30ns * Operating Temperature . . . . . . . . . . . . . . . . . . . . 175oC * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V * Avalanche Energy Rated Applications * Switch Mode Power Supplies * Hard Switched PFC Boost Diode * UPS Free Wheeling Diode * Motor Drive FWD * SMPS FWD * Snubber Diode Package JEDEC STYLE TO-247 ANODE 2 CATHODE CATHODE (BOTTOM SIDE METAL) ANODE 1 Symbol K A1 A2 Device Maximum Ratings (per leg) TC = 25C unless otherwise noted Symbol VRRM VRWM VR IF(AV) IFRM IFSM PD EAVL TJ, TSTG TL TPKG Parameter Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TC = 145oC) Total Device Current (Both Legs) Repetitive Peak Surge Current (20kHz Square Wave) Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) Power Dissipation Avalanche Energy (1A, 40mH) Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334 Ratings 600 600 600 15 30 30 200 150 20 -55 to 175 300 260 Units V V V A A A A W mJ C C C CAUTION: Stresses above those listed in "Device Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. (c)2002 Fairchild Semiconductor Corporation ISL9K1560G3 Rev. C1 ISL9K1560G3 Package Marking and Ordering Information Device Marking K1560G3 Device ISL9K1560G3 Package TO-247 Tape Width N/A Quantity 30 Electrical Characteristics (per leg) TC = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics IR Instantaneous Reverse Current VR = 600V TC = 25C TC = 125C 100 1.0 A mA On State Characteristics VF Instantaneous Forward Voltage IF = 15A TC = 25C TC = 125C 1.8 1.65 2.2 2.0 V V Dynamic Characteristics CJ Junction Capacitance VR = 10V, IF = 0A 62 pF Switching Characteristics trr trr IRM(REC) QRR trr S IRM(REC) QRR trr S IRM(REC) QRR dIM/dt Reverse Recovery Time Reverse Recovery Time Maximum Reverse Recovery Current Reverse Recovered Charge Reverse Recovery Time Softness Factor (tb/ta) Maximum Reverse Recovery Current Reverse Recovered Charge Reverse Recovery Time Softness Factor (tb/ta) Maximum Reverse Recovery Current Reverse Recovered Charge Maximum di/dt during tb IF = 1A, dIF/dt = 100A/s, VR = 30V IF = 15A, dIF/dt = 100A/s, VR = 30V IF = 15A, dIF/dt = 200A/s, VR = 390V, TC = 25C IF = 15A, dIF/dt = 200A/s, VR = 390V, TC = 125C IF = 15A, dIF/dt = 800A/s, VR = 390V, TC = 125C 25 35 29.4 3.5 57 90 2.0 5.0 275 52 1.36 13.5 390 800 30 40 A nC A/s A nC ns ns ns ns A nC ns Thermal Characteristics RJC RJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient TO-247 1.0 30 C/W C/W (c)2002 Fairchild Semiconductor Corporation ISL9K1560G3 Rev. C1 ISL9K1560G3 Typical Performance Curves 30 4000 175oC 1000 25 IF, FORWARD CURRENT (A) 175oC 20 150oC 125oC 15 100oC 10 25oC IR, REVERSE CURRENT (A) 150oC 125oC 100oC 10 75oC 100 1 25oC 0.1 100 5 0 0.5 0.75 1.0 1.25 1.5 1.75 2.0 2.25 200 300 400 500 600 VF, FORWARD VOLTAGE (V) VR , REVERSE VOLTAGE (V) Figure 1. Forward Current vs Forward Voltage 100 VR = 390V, TJ = 125C 80 t, RECOVERY TIMES (ns) Figure 2. Reverse Current vs Reverse Voltage 100 VR = 390V, TJ = 125C 80 t, RECOVERY TIMES (ns) tb AT IF = 30A, 15A, 7.5A tb AT dIF/dt = 200A/s, 500A/s, 800A/s 60 60 40 40 20 ta AT dIF/dt = 200A/s, 500A/s, 800A/s 0 0 5 10 15 20 25 30 IF, FORWARD CURRENT (A) 20 ta AT IF = 30A, 15A, 7.5A 0 200 400 600 800 1000 1200 1400 1600 dIF /dt, CURRENT RATE OF CHANGE (A/s) Figure 3. ta and tb Curves vs Forward Current IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) 16 VR = 390V, TJ = 125C 14 12 dIF/dt = 500A/s 10 8 6 4 2 0 5 10 15 20 25 30 IF, FORWARD CURRENT (A) dIF/dt = 200A/s dIF/dt = 800A/s 25 Figure 4. ta and tb Curves vs dIF/dt VR = 390V, TJ = 125C IF = 30A 20 IF = 15A 15 IF = 7.5A 10 5 0 200 400 600 800 1000 1200 1400 1600 dIF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Maximum Reverse Recovery Current vs Forward Current Figure 6. Maximum Reverse Recovery Current vs dIF/dt (c)2002 Fairchild Semiconductor Corporation ISL9K1560G3 Rev. C1 ISL9K1560G3 Typical Performance Curves (Continued) S, REVERSE RECOVERY SOFTNESS FACTOR VR = 390V, TJ = 125C IF = 30A 2.0 IF = 15A QRR, REVERSE RECOVERED CHARGE (nC) 2.5 700 VR = 390V, TJ = 125C IF = 30A 600 500 IF = 15A 400 1.5 IF = 7.5A 1.0 300 IF = 7.5A 0.5 200 400 600 800 1000 1200 1400 1600 200 200 400 600 800 1000 1200 1400 1600 dIF /dt, CURRENT RATE OF CHANGE (A/s) dIF /dt, CURRENT RATE OF CHANGE (A/s) Figure 7. Reverse Recovery Softness Factor vs dIF/dt 1200 Figure 8. Reverse Recovered Charge vs dIF/dt 16 IF(AV), AVERAGE FORWARD CURRENT (A) 14 12 10 8 6 4 2 0 140 CJ , JUNCTION CAPACITANCE (pF) 1000 800 600 400 200 0 145 150 155 160 165 170 175 0.1 1 10 100 TC, CASE TEMPERATURE (oC) VR , REVERSE VOLTAGE (V) Figure 9. Junction Capacitance vs Reverse Voltage Figure 10. DC Current Derating Curve 1.0 THERMAL IMPEDANCE ZJA, NORMALIZED DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 Figure 11. Normalized Maximum Transient Thermal Impedance (c)2002 Fairchild Semiconductor Corporation ISL9K1560G3 Rev. C1 ISL9K1560G3 Test Circuit and Waveforms Typical Performance Curves (Continued) VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L IF DUT RG CURRENT SENSE + MOSFET VDD 0 0.25 IRM IRM dIF dt ta trr tb VGE t1 t2 - Figure 12. trr Test Circuit Figure 13. trr Waveforms and Definitions I = 1A L = 40mH R < 0.1 VDD = 50V EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VDD DUT R + VDD IV VAVL IL IL t0 t1 t2 t Figure 14. Avalanche Energy Test Circuit Figure 15. Avalanche Current and Voltage Waveforms (c)2002 Fairchild Semiconductor Corporation ISL9K1560G3 Rev. C1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTa CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop DISCLAIMER ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation UHC UltraFETa VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I1 |
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